DocumentCode
481554
Title
An L-band SiGe HBT differential amplifier with frequency-tunable and multiple stopbands
Author
Shirata, Masaki ; Shinohara, Toshio ; Sato, Minoru ; Itoh, Yasushi
Author_Institution
Dept. of Electr. & Electron. Eng., Shonan Inst. of Technol., Fujisawa
fYear
2008
fDate
27-28 Oct. 2008
Firstpage
151
Lastpage
154
Abstract
An L-band SiGe HBT differential amplifier with frequency-tunable and multiple stopbands is presented. To achieve frequency-tunable and multiple bandstop performance, multiple varactor-tuned LC-tank circuits are cascaded in a stacked form between emitters of the differential transistor-pair. The stacked multiple LC-tanks have an outstanding feature in that bandstop frequencies can be varied independently. The implemented 0.35 mum SiGe HBT amplifier with dual stopbands demonstrates an averaged bandstop performance of 13.3 dB over 0.5 to 0.8 GHz and 14.3 dB across 0.6 to 1.1 GHz. The input and output return losses are better than 17.5 dB and 11 dB over 0.2 to 1.5 GHz, respectively. The measured P1dB is +3 dBm and IIP3 is 0 dBm with Vcc = 6 V and Ic = 8 mA.
Keywords
Ge-Si alloys; differential amplifiers; heterojunction bipolar transistors; mobile communication; semiconductor materials; L-band amplifier; LC-tank circuits; SiGe; SiGe HBT amplifier; differential amplifier; differential transistor-pair; frequency 0.5 GHz to 0.8 GHz; frequency 1 GHz to 2 GHz; frequency-tunable stopbands; multiple stopbands; multiple varactor-tuned circuits; return losses; wavelength 0.35 mum; Circuits; Differential amplifiers; Diodes; Filters; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; L-band; Silicon germanium; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Technology, 2008. EuWiT 2008. European Conference on
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-008-8
Type
conf
Filename
4753829
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