Title :
An L-band SiGe HBT differential amplifier with frequency-tunable and multiple stopbands
Author :
Shirata, Masaki ; Shinohara, Toshio ; Sato, Minoru ; Itoh, Yasushi
Author_Institution :
Dept. of Electr. & Electron. Eng., Shonan Inst. of Technol., Fujisawa
Abstract :
An L-band SiGe HBT differential amplifier with frequency-tunable and multiple stopbands is presented. To achieve frequency-tunable and multiple bandstop performance, multiple varactor-tuned LC-tank circuits are cascaded in a stacked form between emitters of the differential transistor-pair. The stacked multiple LC-tanks have an outstanding feature in that bandstop frequencies can be varied independently. The implemented 0.35 mum SiGe HBT amplifier with dual stopbands demonstrates an averaged bandstop performance of 13.3 dB over 0.5 to 0.8 GHz and 14.3 dB across 0.6 to 1.1 GHz. The input and output return losses are better than 17.5 dB and 11 dB over 0.2 to 1.5 GHz, respectively. The measured P1dB is +3 dBm and IIP3 is 0 dBm with Vcc = 6 V and Ic = 8 mA.
Keywords :
Ge-Si alloys; differential amplifiers; heterojunction bipolar transistors; mobile communication; semiconductor materials; L-band amplifier; LC-tank circuits; SiGe; SiGe HBT amplifier; differential amplifier; differential transistor-pair; frequency 0.5 GHz to 0.8 GHz; frequency 1 GHz to 2 GHz; frequency-tunable stopbands; multiple stopbands; multiple varactor-tuned circuits; return losses; wavelength 0.35 mum; Circuits; Differential amplifiers; Diodes; Filters; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; L-band; Silicon germanium; Varactors;
Conference_Titel :
Wireless Technology, 2008. EuWiT 2008. European Conference on
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-008-8