30 Gbps High-Speed Characterization and Channel Performance of Coaxial Through Silicon Via

Author

Jung, Daniel H. ; Heegon Kim ; Sukjin Kim ; Kim, Jonghoon J. ; Bumhee Bae ; Jonghoon Kim ; Jong-Min Yook ; Jun-Chul Kim ; Joungho Kim

Author_Institution

Electr. Eng. Dept., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

24

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

814

Lastpage

816

Abstract

Coaxial through silicon via (TSV) technique allows reduction of high frequency loss due to conductivity in silicon substrate and flexibility in impedance by controlling the ratio of shield to center radii. For the first time, we measured and analyzed the high-speed channel performance of coaxial TSV. This letter presents the measurement results of the fabricated test vehicle in S-parameter and eye-diagram. The eye-diagram measurement results prove that coaxial TSV is capable of supporting signal transmission up to bit rate of 30 Gbps. The equivalent circuit model is suggested and experimentally verified by S-parameter comparison. Furthermore, the superiority of coaxial TSV over conventional TSV is confirmed by comparison of S-parameter results from equivalent circuit model simulation.

Keywords

S-parameters; equivalent circuits; integrated circuit modelling; microwave integrated circuits; three-dimensional integrated circuits; S-parameter; bit rate 30 Gbit/s; coaxial TSV; coaxial through silicon via; equivalent circuit model; eye-diagram measurement; high frequency loss; high speed channel performance; high speed characterization; Bit rate; Equivalent circuits; Integrated circuit modeling; Mathematical model; Silicon; Through-silicon vias; Coaxial through silicon via (TSV); equivalent circuit model; high frequency loss;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2348502

Filename

6884870