Electrostatic discharge effects in Fully Depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

The ESD sensitivity of 65-nm fully depleted SOI MOSFETs (with thin silicon body) used as output buffer devices is studied. A detailed electrical investigation is carried out in order to classify the observed failure modes and mechanisms. We propose a new failure criterion that allows us to univocally identify the device failure. Finally, we analyze the impact of device geometry and strain engineering on the ESD sensitivity.