A physics-based compact model for ESD protection diodes under very fast transients

Author

Manouvrier, Jean-Robert ; Fonteneau, Pascal ; Legrand, Charles-Alexandre ; Beckrich-Ros, Helene ; Richier, Corinne ; Nouet, Pascal ; Azais, Florence

Author_Institution

STMicroelectronics, Crolles, France

fYear

2008

fDate

7-11 Sept. 2008

Firstpage

67

Lastpage

75

Abstract

In this paper, a complete analysis of the physical phenomena occurring in ESD protection diodes during very fast transients is investigated. Based on TCAD simulations and transient characterization, it is highlighted that the mobility degradation effect must also be taken into account in addition to the conductivity modulation effect for modeling diode behavior during triggering. A new physics-based compact model of ESD protection diodes is proposed, demonstrated and validated under very fast transient events in the CDM time domain.

Keywords

electrostatic discharge; isolation technology; semiconductor device models; semiconductor diodes; technology CAD (electronics); transient analysis; ESD protection diodes; STI diodes; TCAD simulations; conductivity modulation effect; fast transient events; mobility degradation; physics-based compact model; triggering; Conductivity; Degradation; Diodes; Electronic mail; Electrostatic discharge; Power system transients; Predictive models; Protection; Transient analysis; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium, 2008. EOS/ESD 2008. 30th

Conference_Location

Tucson, AZ

Print_ISBN

978-1-58537-146-4

Electronic_ISBN

978-1-58537-147-1

Type

conf

Filename

4772116