Title :
Extreme voltage and current overshoots in HV snapback devices during HBM ESD stress
Author :
Linten, D. ; Vashchenko, V. ; Scholz, M. ; Jansen, P. ; Lafonteese, D. ; Thijs, S. ; Sawada, M. ; Hasebe, T. ; Hopper, P. ; Groeseneken, G.
Author_Institution :
IMEC vzw, Leuven, Belgium
Abstract :
The turn-on behavior of high voltage ESD devices is studied during HBM ESD stress. Two phenomena are experimentally observed for two different HV processes and several device architectures: a voltage overshoot up to two times of the TLP triggering voltage, and a current overshoot several times the nominal HBM current.
Keywords :
MOSFET; electrostatic devices; electrostatic discharge; high-voltage techniques; thyristors; HBM ESD stress; HV snapback devices; NLDMOS-SCR; TLP; VDMOS-SCR; current overshoot; high voltage ESD devices; high voltage pins; triggering voltage; turn-on behavior; voltage overshoot; Electrostatic discharge; Stress; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2008. EOS/ESD 2008. 30th
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-58537-146-4
Electronic_ISBN :
978-1-58537-147-1
