Title :
A study of advanced technique on RC-triggered NMOSFET power clamp
Author :
Ishizuka, Hiroyasu ; Otsuka, Yoko ; Ikeda, Hiroyuki ; Tanaka, Kiyoshi
Author_Institution :
Renesas Technol. Corp., Kodaira
Abstract :
We analyzed the relation of ESD robustness of the RC-triggered MOSFET Power Clamp to the Gate voltage and Well voltage. If Gate voltage is suppressed low with Well bias applied, the current concentration is avoided, and IT2 increases so that the ESD robustness target can be achieved. By this technology, HBM>2000V, MM>200V and Automobile Specification Transient Latch-up of over 200V performances are achieved by the 990 um size Discharge NMOS per Power domain.
Keywords :
MOS integrated circuits; MOSFET; RC circuits; electrostatic discharge; ESD robustness; RC-triggered NMOSFET power clamp; automobile specification transient latch-up; gate voltage; well voltage; Clamps; Diodes; Electrostatic discharge; MOS devices; MOSFET circuits; Power MOSFET; Robustness; Stress; Testing; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2008. EOS/ESD 2008. 30th
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-58537-146-4
Electronic_ISBN :
978-1-58537-147-1
