DocumentCode :
48373
Title :
Modeling the Channel Charge and Potential in Quasi-Ballistic Nanoscale Double-Gate MOSFETs
Author :
Mangla, Anurag ; Sallese, Jean-Michel ; Sampedro, C. ; Gamiz, Francisco ; Enz, Christian
Author_Institution :
Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Volume :
61
Issue :
8
fYear :
2014
fDate :
Aug. 2014
Firstpage :
2640
Lastpage :
2646
Abstract :
In this paper, we present an analytical semiempirical model of the profile of the channel charge and potential in quasi-ballistic double-gate (DG) MOSFETs. The charge model is based on the premise of separating the charge density in the quasi-ballistic channel into two hypothetical components: 1) exclusively ballistic (collision-free) and 2) collision-dominated components, which are governed by the same electrostatics. These components are related to each other through a ballisticity parameter whose values lie between 0 and 1. Varying the value of this parameter allows us to model the charge profile continuously between diffusive and purely ballistic devices. Using the proposed charge model and the DG MOSFET electrostatics, an analytical expression for the channel potential is derived which, like the charge model, is continuous between the diffusive and ballistic regimes.
Keywords :
MOSFET; ballistic transport; electrostatics; MOSFET electrostatics; MOSFET potential; channel charge modeling; channel charge profile; charge density; collision dominated component; collision-free component; exclusively ballistic component; quasiballistic channel; quasiballistic nanoscale double gate MOSFET; semiempirical model; Analytical models; Charge carrier density; Electric potential; Logic gates; MOSFET; Nanoscale devices; Semiconductor device modeling; Compact model; double-gate (DG) MOSFET; quasi-ballistic; quasi-ballistic.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2327255
Filename :
6832484
Link To Document :
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