Title :
A New Analytical Model for the Surface Electrical Field Distribution of Double RESURF LDMOS
Author :
Li, Qi ; Li, Zhaoji
Author_Institution :
IC Design Center, Univ. of Electron. Sci. & Technol., Chengdu
Abstract :
In this paper, a new analytical model for the surface electrical field distributions of double RESURF LDMOS is presented. Based on the 2-D Poisson solution, the model gives the influence on the surface electrical field in terms of the drain bias and structure parameters, such as the doping concentration, the depth and the position of the P-top region, the thickness and the doping concentration of the drift region and the substrate doping concentration; the dependence of breakdown voltage on the length of drift region is calculated. Further, an effectual way to gain the optimum high-voltage is also proposed. All analytical results are well verified by simulation results obtained by MEDICI and previous experimental data, showing the validity of the model presented here
Keywords :
MOS integrated circuits; Poisson distribution; doping profiles; integrated circuit design; power integrated circuits; surface potential; 2-D Poisson solution; MEDICI; breakdown voltage; doping concentration; double RESURF LDMOS; drain bias; drift region; surface electrical field distribution; Analytical models; Dielectric substrates; Doping; Integrated circuit modeling; Numerical simulation; Position measurement; Semiconductor process modeling; Silicon; Tellurium; Voltage; Double RESURF; Model; Surface electrical field;
Conference_Titel :
Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0448-7
DOI :
10.1109/IPEMC.2006.4777951
