Unipolar SiC devices - latest achievements on the way to a new generation of high voltage power semiconductors

Silicon carbide power devices are supposed to revolutionize certain parts of the power semiconductor business. After the successful product release of Schottky barrier diodes in 2001 and the development of a new generation of surge current stable diodes in 2005, the next logical step in the device chain should be a SiC switching device. Addressable are high voltage applications in energy systems as well as the huge market for low voltage power switches, where even in the blocking voltage range below 100 V SiC is assumed to be one potential candidate for meeting the increasing demands on power density. The paper will give an overview about latest developments of SiC power switches and diodes. In addition, some potential applications serving as drivers for the SiC power device development will be sketched. Finally, an outlook to near and long term perspectives for SiC power devices is given.