Emitter Size Effect in 4H-SiC BJT

Author

Gao, Yan ; Huang, Alex Q. ; Krishnaswami, Sumi ; Agarwal, Anant K. ; Scozzie, Charles

Author_Institution

Semicond. Power Electron. Center, North Carolina State Univ., Raleigh, NC

Volume

1

fYear

2006

fDate

14-16 Aug. 2006

Firstpage

1

Lastpage

4

Abstract

SiC BJT with varying emitter width were investigated by numerical simulations as well as experiments. Emitter size effects (ESEs) are demonstrated in today´s SiC BJT by comparing the characterization of BJT with different emitter width. Surface recombination current is found to be comparable with published result for heterojunction bipolar transistors (HBTs). In SiC BJT design, this effect has to be considered. A good surface passivation is required to reduce the effect of surface recombination on the current gain

Keywords

heterojunction bipolar transistors; passivation; power bipolar transistors; semiconductor device measurement; silicon compounds; surface recombination; BJT characterization; HBT; SiC; current gain measurement; emitter size effect; emitter width; heterojunction bipolar transistors; silicon carbide BJT; surface passivation; surface recombination current; Current density; Current measurement; Density measurement; Gain measurement; Ionization; Laboratories; Powders; Power electronics; Radiative recombination; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International

Conference_Location

Shanghai

Print_ISBN

1-4244-0448-7

Type

conf

DOI

10.1109/IPEMC.2006.4777967

Filename

4777967