Title :
The Mechanism Analysis of IGBT Module Invalidation
Author :
Aide, Xu ; Yinhai, Fan ; Xinxin, Wang ; Yuanyuan, Liu
Author_Institution :
Dalian Maritime Univ.
Abstract :
The main purpose of this paper is to make a brief introduction of the applicable scope and the testing condition of IGBT module, to analyze the various reason causing IGBT module to be invalid which mainly involves drive part trouble, excessive heat, mechanical hurts, over voltage, over current and inductance that exists in the leads of circuit, and to make a general summary of the cautions which should be paid much attention to preventing IGBT module from being invalidated
Keywords :
inductance; insulated gate bipolar transistors; power bipolar transistors; IGBT module; gate drive voltage; inductance; insulated gate bipolar transistor module; mechanical hurts; over current; over voltage; Circuit testing; Current measurement; Drives; Frequency measurement; Inductance measurement; Insulated gate bipolar transistors; Loss measurement; Time measurement; Voltage control; Voltage measurement; Insulated Gate Bipolar Transistor module; excessive heat; gate drive voltage; inductance exists in the leads of circuit; invalidation; mechanical hurts; over current; over voltage;
Conference_Titel :
Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0448-7
DOI :
10.1109/IPEMC.2006.4778173
