The Mechanism Analysis of IGBT Module Invalidation

Author

Aide, Xu ; Yinhai, Fan ; Xinxin, Wang ; Yuanyuan, Liu

Author_Institution

Dalian Maritime Univ.

Volume

2

fYear

2006

fDate

14-16 Aug. 2006

Firstpage

1

Lastpage

5

Abstract

The main purpose of this paper is to make a brief introduction of the applicable scope and the testing condition of IGBT module, to analyze the various reason causing IGBT module to be invalid which mainly involves drive part trouble, excessive heat, mechanical hurts, over voltage, over current and inductance that exists in the leads of circuit, and to make a general summary of the cautions which should be paid much attention to preventing IGBT module from being invalidated

Keywords

inductance; insulated gate bipolar transistors; power bipolar transistors; IGBT module; gate drive voltage; inductance; insulated gate bipolar transistor module; mechanical hurts; over current; over voltage; Circuit testing; Current measurement; Drives; Frequency measurement; Inductance measurement; Insulated gate bipolar transistors; Loss measurement; Time measurement; Voltage control; Voltage measurement; Insulated Gate Bipolar Transistor module; excessive heat; gate drive voltage; inductance exists in the leads of circuit; invalidation; mechanical hurts; over current; over voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International

Conference_Location

Shanghai

Print_ISBN

1-4244-0448-7

Type

conf

DOI

10.1109/IPEMC.2006.4778173

Filename

4778173