An Analytical Model for 4H-SiC Super-Junction Devices

Author

Yu, L.C. ; Sheng, K.

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ

Volume

2

fYear

2006

fDate

14-16 Aug. 2006

Firstpage

1

Lastpage

4

Abstract

In this paper, for the first time, a new and easy-to-implement analytical model is developed for the breakdown voltage and specific on-resistance of 4H-SiC super-junction devices. The model features simple analytical equations while is still capable of predicting the device characteristics accurately for a large variety of device structural parameters. Accuracy of this model is verified by multi-dimensional numerical simulation

Keywords

electric resistance; power semiconductor devices; semiconductor device breakdown; semiconductor device models; semiconductor junctions; silicon compounds; wide band gap semiconductors; 4H-SiC super-junction devices; SiC; analytical model; breakdown voltage; device characteristics; device structural parameters; multidimensional numerical simulation; power device; specific on-resistance; Analytical models; Doping; Numerical simulation; Poisson equations; Power semiconductor devices; Predictive models; Semiconductor materials; Shape; Structural engineering; Voltage; 4H-SiC; Model; Power device; Super-junction;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International

Conference_Location

Shanghai

Print_ISBN

1-4244-0448-7

Type

conf

DOI

10.1109/IPEMC.2006.4778178

Filename

4778178