Title :
Motional Resistance Issue of TSV-Based Resonator Device and Its Improvement With a Concave Cu TSV Structural Design
Author :
Jian-Yu Shih ; Yen-Chi Chen ; Chih-Hung Chiu ; Kuan-Neng Chen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Motional resistance of TSV-based resonator devices with 3D integration techniques is investigated at the operating oscillating mode. Even with well-developed TSV and device fabrication, the motional resistance issue of the TSV-based resonator device is found due to the poor connected Ag paste. The corresponding solution is demonstrated by a modified concave Cu TSVs structure. This modified concave Cu TSV design shows the excellent device characteristics and no visible gaps between the Cu TSVs and resonator devices to insure a good electrical connection.
Keywords :
copper; crystal resonators; integrated circuit interconnections; silver; three-dimensional integrated circuits; 3D integration; Ag; Cu; TSV based resonator device; concave TSV structural design; motional resistance; through silicon via; Capacitance; Crystals; Frequency measurement; Resistance; Resonant frequency; Three-dimensional displays; Through-silicon vias; Three-dimensional (3D) integration; concave through silicon via (TSV); motional resistance; motional resistance.;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2327117