Suppression of sublinearity of light–current curve in 850 nm quantum well laser with asymmetric barrier layers

Author

Zubov, F.I. ; Maximov, M.V. ; Shernyakov, Yu.M. ; Kryzhanovskaya, N.V. ; Semenova, E.S. ; Yvind, K. ; Asryan, L.V. ; Zhukov, A.E.

Author_Institution

St. Petersburg Acad. Univ., St. Petersburg, Russia

Volume

51

Issue

14

fYear

2015

fDate

7 9 2015

Firstpage

1106

Lastpage

1108

Abstract

An AlGaAs/GaAs quantum well (QW) laser is fabricated with GaInP and AlGaInAs asymmetric barrier layers (ABLs) and its light-current characteristic (LCC) is compared with that of a reference conventional QW laser without ABLs. It was found that the use of the ABLs suppresses the sublinearity of the LCC at high current densities. As a result, the maximum lasing power of 9.2 W, being limited by catastrophic optical mirror damage, is achieved at a considerably lower operating current in the laser with ABLs as compared to the reference laser (12.5 against 20.2 A). The ABL effect is associated with the suppression of the parasitic recombination in the optical confinement layer, as confirmed by a decrease of the intensity of the spontaneous emission from the layer.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; spontaneous emission; AlGaAs-GaAs; AlGaInAs; GaInP; asymmetric barrier layers; catastrophic optical mirror damage; current densities; light-current characteristic; light-current curve; maximum lasing power; optical confinement layer; parasitic recombination; power 9.2 W; quantum well laser; spontaneous emission; sublinearity suppression; wavelength 850 nm;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2015.1392

Filename

7150503