DocumentCode
485292
Title
A 0.6-V high-order curvature-compensated bandgap voltage reference
Author
Honglai Wang ; Xiaoxing Zhang ; Yujie Dai ; Yingjie Lv
Author_Institution
Microelectron. Inst., Nankai Univ., Tianjin
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
330
Lastpage
332
Abstract
A high-order curvature-compensated bandgap voltage reference, which depends on a temperature-dependant resistor radio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper. Simulation results with 0.18 mum CMOS process show that the proposed 600 mV voltage reference has a temperature coefficient of 3.7 ppm/degC in the temperature range between -40 and 140degC at 1.6 V supply.
Keywords
CMOS integrated circuits; resistors; CMOS process; diffusion resistor; high-order curvature-compensated bandgap voltage reference; high-resistive poly resistor; temperature -40 degC to 140 degC; temperature-dependant resistor radio; voltage 1.6 V; voltage 600 mV; Bandgap; CMOS; Curvature-compensation; voltage reference;
fLanguage
English
Publisher
iet
Conference_Titel
Wireless, Mobile and Sensor Networks, 2007. (CCWMSN07). IET Conference on
Conference_Location
Shanghai
ISSN
0537-9989
Print_ISBN
978-0-86341-836-5
Type
conf
Filename
4786204
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