Title :
A 0.6-V high-order curvature-compensated bandgap voltage reference
Author :
Honglai Wang ; Xiaoxing Zhang ; Yujie Dai ; Yingjie Lv
Author_Institution :
Microelectron. Inst., Nankai Univ., Tianjin
Abstract :
A high-order curvature-compensated bandgap voltage reference, which depends on a temperature-dependant resistor radio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper. Simulation results with 0.18 mum CMOS process show that the proposed 600 mV voltage reference has a temperature coefficient of 3.7 ppm/degC in the temperature range between -40 and 140degC at 1.6 V supply.
Keywords :
CMOS integrated circuits; resistors; CMOS process; diffusion resistor; high-order curvature-compensated bandgap voltage reference; high-resistive poly resistor; temperature -40 degC to 140 degC; temperature-dependant resistor radio; voltage 1.6 V; voltage 600 mV; Bandgap; CMOS; Curvature-compensation; voltage reference;
Conference_Titel :
Wireless, Mobile and Sensor Networks, 2007. (CCWMSN07). IET Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-0-86341-836-5
