Title :
High-Speed Silicon Electro-Optic Microring Modulator for Optical Interconnects
Author :
Malacarne, Antonio ; Gambini, Fabrizio ; Faralli, Stefano ; Klamkin, Jonathan ; Poti, Luca
Author_Institution :
Nat. Lab. of Photonic Networks, Consorzio Naz. Interuniv. per le Telecomun., Pisa, Italy
Abstract :
A silicon microring modulator for ON-OFF keying intensity modulation is presented and experimentally characterized. Modulation operation is based on carrier depletion effect in a p-n junction. The resonance wavelength shift is measured for bias voltages in the range between 0 and -7 V and modulation is demonstrated by employing electrical signals with data rates of 25 and 30 Gb/s and peak-to-peak voltage of 3.75 V. Performance in terms of bit error rate as a function of the optical signal-to-noise ratio for point-to-point transmission over 10 km of single mode fiber at both the data rates is experimentally evaluated, manifesting to be suitable for short- and medium-reach optical interconnects applications.
Keywords :
amplitude shift keying; electro-optical modulation; integrated optics; integrated optoelectronics; intensity modulation; micro-optics; optical communication equipment; optical fibre communication; optical interconnections; optical noise; p-n junctions; silicon; ON-OFF keying intensity modulation; Si; bias voltages; bit error rate; bit rate 25 Gbit/s; bit rate 30 Gbit/s; carrier depletion effect; data rates; electrical signals; high-speed silicon electro-optic microring modulator; medium-reach optical interconnect application; modulation operation; optical signal-to-noise ratio; p-n junction; point-to-point transmission; resonance wavelength shift; short-reach optical interconnect application; single mode fiber; voltage 0 V to -7 V; voltage 3.75 V; Modulation; Optical fibers; Optical noise; Photonics; Silicon; Electro-optic modulators; integrated opto-electronics; photonic integrated circuits; silicon-on-insulator;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2313040
