Extremely Uniform Tunnel Barriers for Low-Cost Device Manufacture

Author

Missous, Mohamed ; Kelly, Michael J. ; Sexton, James

Author_Institution

Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK

Volume

36

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

543

Lastpage

545

Abstract

We report on the final steps needed to achieve the level of control over the properties of single tunnel barriers of AlAs needed to allow the manufacture of high-volume low-cost microwave and millimeter-waves detectors. We achieve a 1% standard deviation of the current-voltage characteristics across 2-in wafers and average currents from different wafers varying by 1%, when modeling shows that a monolayer error in the AlAs barrier layer thickness would result in a 270% change in the same electrical characteristics.

Keywords

III-V semiconductors; aluminium compounds; monolayers; semiconductor device manufacture; semiconductor device models; semiconductor diodes; AlAs; barrier layer thickness; current-voltage characteristics; electrical characteristics; high-volume low-cost microwave detectors; low-cost device manufacture; millimeter-waves detectors; monolayer error; size 2 in; uniform tunnel barriers; Current-voltage characteristics; Gallium arsenide; Microwave communication; Microwave devices; Semiconductor diodes; Standards; Tunneling; Semiconductors; manufacture; molecular beam epitaxy; semiconductors; tunnel devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2427335

Filename

7097674