DocumentCode :
48651
Title :
EML Based on Side-Wall Grating and Identical Epitaxial Layer Scheme
Author :
Hou, Liwen ; Tan, Min ; Haji, Mohsin ; Eddie, I. ; Marsh, John H.
Author_Institution :
School of Engineering, University of Glasgow, Glasgow, U.K.
Volume :
25
Issue :
12
fYear :
2013
fDate :
15-Jun-13
Firstpage :
1169
Lastpage :
1172
Abstract :
We, for the first time, present electroabsorption modulator lasers based on side-wall gratings and the identical epitaxial layer scheme using very simple fabrication processes. The devices show stable single-mode operation with little mode-hopping and a side mode suppression ratio of more than 45 dB, which is maintained until the applied current exceeds 6 times that of the threshold value. The drive voltage required to obtain a 12-dB extinction ratio is {-}{\\rm 2}~{\\rm V} . The devices can be operated with a 3-dB bandwidth of 7 GHz allowing for error-free large signal modulation at 5 Gb/s with a dynamic extinction ratio of 11 dB.
Keywords :
Distributed feedback (DFB) laser; electroabsorption modulator (EAM); electroabsorption modulator integrated DBF laser (EML); high extinction ratio (ER); integrated laser modulator (ILM); low drive voltage;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2013.2261809
Filename :
6514055
Link To Document :
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