Title :
An Alternative One-Diode Model for Illuminated Solar Cells
Author :
Breitenstein, O.
Author_Institution :
Max Planck Inst. of Microstructure Phys., Halle, Germany
Abstract :
A novel one-diode model is proposed for illuminated solar cells, which contains an additional variable resistance describing minority carrier diffusion from the bulk to the p-n junction. This model naturally describes the differences between photo- and electroluminescence imaging, as well as a well-known departure from the superposition principle.
Keywords :
diffusion; electroluminescence; minority carriers; p-n junctions; photoluminescence; solar cells; electroluminescence imaging; illuminated solar cells; minority carrier diffusion; novel one-diode model; p-n junction; photoluminescence; superposition principle; variable resistance; Imaging; Integrated circuit modeling; Lighting; P-n junctions; Photovoltaic cells; Resistance; Spontaneous emission; Electroluminescence (EL) imaging; one-diode model; photoluminescence (PL) imaging; solar cell modeling; superposition principle;
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2014.2309796
