Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

Author

Persson, Karl-Magnus ; Berg, Markus ; Borg, Mattias ; Jun Wu ; Johansson, Susie ; Svensson, Jorgen ; Jansson, Karl ; Lind, Erik ; Wernersson, Lars-Erik

Author_Institution

Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden

Volume

60

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

2761

Lastpage

2767

Abstract

This paper presents dc and RF characterization as well as modeling of vertical InAs nanowire (NW) MOSFETs with L_G=200 nm and Al₂O₃/HfO₂ high-κ dielectric. Measurements at V_DS=0.5 V show that high transconductance (g_m=1.37 mS/μm), high drive current (I_DS=1.34 mA/μm), and low ON-resistance (R_ON=287 Ωμm) can be realized using vertical InAs NWs on Si substrates. By measuring the 1/f-noise, the gate area normalized gate voltage noise spectral density, S_VG·L_G·W_G, is determined to be lowered by one order of magnitude compared with similar devices with a high-κ film consisting of HfO₂ only. In addition, with a virtual source model we are able to determine the intrinsic transport properties. These devices (L_G=200 nm) show a high injection velocity (v_inj=1.7×10⁷ cm/s) with a performance degradation for array FETs predominantly due to an increase in series resistance.

Keywords

1/f noise; III-V semiconductors; MOSFET; alumina; hafnium compounds; high-k dielectric thin films; indium compounds; nanowires; semiconductor device noise; Al₂O₃-HfO₂; InAs; RF characterization; Si; array FET; gate area normalized gate voltage noise spectral density; intrinsic transport properties; performance degradation; series resistance; size 200 nm; substrates; vertical nanowire MOSFET; virtual source model; voltage 0.5 V; Current measurement; Logic gates; MOSFET; Radio frequency; Resistance; Transconductance; InAs; MOSFET; RF; nanowire (NW);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2272324

Filename

6563112