• DocumentCode
    48679
  • Title

    {\\rm TiO}_{2} Nanoparticles Arrays Ultraviolet-A Detector With Au Schottky Contact

  • Author

    Chakrabartty, Shubhro ; Mondal, Aniruddha ; Sarkar, Mitra Barun ; Choudhuri, Bijit ; Saha, Apu Kumar ; Bhattacharyya, Anirban

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol., Agartala, India
  • Volume
    26
  • Issue
    11
  • fYear
    2014
  • fDate
    1-Jun-14
  • Firstpage
    1065
  • Lastpage
    1068
  • Abstract
    We have demonstrated the synthesis of TiO2 nanoparticles (NPs) arrays on SiOx thin film using the glancing angle deposition technique. The deposited TiO2 NPs are 2-12 nm in size and have a density of ~2 × 1012 cm-2. The X-ray diffraction depicted that the TiO2 NPs are polycrystalline. An optical absorption measurement shows the maximum efficiency lies between 310 and 320 nm. The photoluminescence emission has been observed at 3.28 eV (~378 nm) from TiO2 NPs. The Au/TiO2 NPs Schottky detector possesses a high ideality factor (11.4). The device has cutoff at 500 nm and maximum responsivity (0.05 A/W), external quantum efficiency (~16%) at 378 nm. Under white light ON/OFF switching irradiation, the device current is increased from 1.9 to 38 nA and vice versa with a rise time of 1 s and decay time of 0.9 s.
  • Keywords
    Schottky barriers; X-ray diffraction; gold; infrared spectra; nanofabrication; nanoparticles; photoluminescence; semiconductor materials; semiconductor-metal boundaries; titanium compounds; ultraviolet detectors; ultraviolet spectra; visible spectra; Au-TiO2; Schottky contact; SiOx; X-ray diffraction; decay time; external quantum efficiency; glancing angle deposition; ideality factor; maximum responsivity; nanoparticle arrays; optical absorption measurement; photoluminescence emission; polycrystalline nanoparticles; rise time; size 2 nm to 12 nm; thin film; ultraviolet-A detector; wavelength 378 nm; white light on/off switching irradiation; Absorption; Detectors; Gold; Optical variables measurement; Photonic band gap; Silicon; Substrates; Microscopy; Schottky diodes; nanotechnology; optical device fabrication; photodetectors; photoluminescence;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2014.2313181
  • Filename
    6777532