Efficiency Improvement of Near-Ultraviolet Nitride-Based Light-Emitting-Diode Prepared on GaN Nano-Rod Arrays by Metalorganic Chemical Vapor Deposition

Author

Cheng Huang Kuo ; Yu An Chen ; Ji Pu Wu ; Li Chuan Chang

Author_Institution

Inst. of Lighting & Energy Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan

Volume

50

Issue

3

fYear

2014

fDate

Mar-14

Firstpage

129

Lastpage

132

Abstract

Near-ultraviolet nitride-based light-emitting diodes (LEDs) were prepared on GaN nanorod arrays (NRAs). Transmission electron microscopy results show that the NRAs partially block threading dislocation propagation from the GaN template. Compared with conventional LEDS, the output power of the prepared LED using GaN NRAs with an injection current of 20 mA was enhanced by a factor of 1.67.

Keywords

III-V semiconductors; MOCVD; gallium compounds; light emitting diodes; nanophotonics; nanorods; optical arrays; optical fabrication; transmission electron microscopy; ultraviolet spectra; GaN; GaN NRA; GaN nanorod arrays; GaN template; conventional LEDS; current 20 mA; injection current; metalorganic chemical vapor deposition; near-ultraviolet nitride-based light-emitting-diode; output power; threading dislocation propagation; transmission electron microscopy; Epitaxial growth; Gallium nitride; Light emitting diodes; Power generation; Stacking; Substrates; Surface treatment; InGaN/GaN; LED; Nano-rod arrays; near-ultraviolet;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2013.2297413

Filename

6702457