DocumentCode :
48860
Title :
Alloying From Screen-Printed Aluminum Pastes Containing Boron Additives
Author :
Rauer, Michael ; Schmiga, Christian ; Glatthaar, Markus ; Glunz, Stefan W.
Author_Institution :
Fraunhofer Inst. for Solar Energy Syst., Freiburg, Germany
Volume :
3
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
206
Lastpage :
211
Abstract :
We present a detailed study on alloying from screen-printed aluminum pastes containing boron additives (Al-B pastes) to further enhance the efficiency of p- and n-type silicon solar cells with an Al-alloyed back-surface field and rear emitter, respectively. Due to the high B solubility in Si, the additional incorporation of B atoms as acceptors into the Al-alloyed p+ region-referred to as Al-B codoping of Si-provides improved shielding of electrons from the recombination-active surface. Thus, alloying from Al-B pastes allows for significantly thinner p + regions and leads to a considerable reduction of the p + saturation current densities. By comparing surface-passivated p+ regions alloyed from Al-B pastes or conventional Al pastes with each other, we show that a highly recombination-active defect limits the minority carrier lifetime in these p+ regions. We demonstrate that the acceptor concentration profiles of the p+ regions can easily be modified by adding different amounts of aluminum diboride or boron trioxide as B sources to the Al pastes.
Keywords :
additives; alloying; aluminium; boron; carrier lifetime; current density; electron-hole recombination; elemental semiconductors; field emitter arrays; impurity states; minority carriers; passivation; silicon; solar cells; solubility; Al-B codoping; Al-B pastes; Al-alloyed back-surface field emitter; Al-alloyed region; B atoms; B solubility; B sources; Si:Al,B; acceptor concentration profiles; alloying; aluminum diboride; boron additives; boron trioxide; electron shielding; highly recombination-active defect; minority carrier lifetime; n-type silicon solar cell efficiency; p-type silicon solar cell efficiency; rear emitter; recombination-active surface; saturation current densities; screen-printed aluminum pastes; surface-passivated regions; Additives; Alloying; Aluminum; Boron; Doping; Photovoltaic cells; Silicon; Aluminum-boron codoping; aluminum-boron paste; coalloying; silicon solar cells;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2012.2217113
Filename :
6317125
Link To Document :
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