Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices With Partially Covered Intrinsic Regions

Author

Minsuk Kim ; Youngin Jeon ; Yoonjoong Kim ; Sangsig Kim

Author_Institution

Sch. of Electr. Eng., Korea Univ., Seoul, South Korea

Volume

14

Issue

4

fYear

2015

fDate

Jul-15

Firstpage

633

Lastpage

637

Abstract

Dual-functional devices based on gated p-i-n diodes are proposed in this simulation study. The dual-functional devices function not only as n-channel tunneling field-effect transistors (nTFETs) but also as p-channel impact-ionization FETs (p-IFETs), depending on the bias conditions. In this study, the I-V characteristics, subthreshold swing (SS), ON/OFF current ratio (I_on/I_off), and band diagram are analyzed using a device simulator (Silvaco Atlas), and the features of the n-TFETs and the p-IFETs are extracted from the simulated data. The n-TFETs exhibit high I_on/I_off of ~10¹¹ and a sub-60-mV/dec SS, and the p-IFETs yield extremely low SS of as small as 8.57 mV/dec. Our approach is one of the useful methods to design multifunctional electronics for lowering the power consumption.

Keywords

field effect transistors; impact ionisation; p-i-n diodes; semiconductor device models; tunnel transistors; tunnelling; I-V characteristics; ON-OFF current ratio; Silvaco Atlas; band diagram; bias conditions; device simulator; dual-functional devices; gated p-i-n diodes; multifunctional electronics; n-channel tunneling field-effect transistors; p-channel impact-ionization FET; partially covered intrinsic regions; power consumption; subthreshold swing; tunneling FET characteristics; Electrical engineering; Leakage currents; Logic gates; Threshold voltage; Transistors; Tunneling; Dual function; dual function; impact ionization; integration; sub-60 mV/dec; sub-60??mV/dec; tunneling;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2015.2427453

Filename

7097725