Title :
Design Considerations for Power Schottky Barrier Diodes
Author :
Ichikawa, Katsusuke ; Yamazaki, Kazuo
Author_Institution :
Semiconductor Division, Sindengen Electric Mfg. Co., Ltd., 10-13 Minami-cho, Hanno, Saitama, Japan 357
Abstract :
(1) Theoretical equations for design of the power Schottky barrier diode(SBD) with low reverse voltage are proposed and the results of the calculation are in agreement with the experimental data. (2) These equations are applied to the optimum design for SBD with 30V-200A and good characteristics are obtained. (3) Equations for SBDs with high breakdown voltage (more than 100V) in which minority carrier injection is taken into account are proposed and the results of the calculation show agreement with some of the experimental data.
Keywords :
Breakdown voltage; Difference equations; Frequency; Low voltage; Power semiconductor switches; Power supplies; Schottky barriers; Schottky diodes; Semiconductor diodes; Temperature;
Conference_Titel :
Telecommunications Energy Conference, 1983. INTELEC '83. Fifth International
Conference_Location :
Tokyo, Japan
