• DocumentCode
    490868
  • Title

    A Method to Determine Overload Safe Operating Area

  • Author

    Morozowich, Merle

  • Author_Institution
    Member IEEE, Westinghouse Electric Corporation, Semiconductor Division, Youngwood, PA 15697
  • fYear
    1985
  • fDate
    14-17 Oct. 1985
  • Firstpage
    433
  • Lastpage
    437
  • Abstract
    When the load is suddenly shorted in a transistor circuit, the full D.C. rail voltage appears across the transistor and the current is limited by the gain. During this shorted load operation, the transistor is opetrating in the Forward Bias Safe Operating Region. The length of time a transistor can sustain this overload is dependent on the transistor junction temperature. This paper is a study of the variations of gain versus VCE voltage to 800 volts on a 1000 volt transistor. Also, the relationship of high voltage gain to the standard data sheet low voltage gain is investigated. Operation at high voltage and high current can result in excessive junction temperature which can cause immediate failures.. A method of determining safe operation based on the junction temperature just before a load short, using the high voltage gain and the Forward Biased Overload Safe Operating Area is presented.
  • Keywords
    Capacitors; Circuits; Current measurement; Gain measurement; Inductance; Low voltage; Rails; Temperature dependence; Testing; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications Energy Conference, 1985. INTELEC '85. Seventh International
  • Conference_Location
    Munich, Federal Republic of Germany
  • Print_ISBN
    3-8007-1429-9
  • Type

    conf

  • Filename
    4794262