Study on Transmission Characteristics of Carbon Nanotube Through Silicon Via Interconnect

Author

Libo Qian ; Zhangming Zhu ; Yinshui Xia

Author_Institution

Sch. of Inf. Sci. & Eng., Ningbo Univ., Ningbo, China

Volume

24

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

830

Lastpage

832

Abstract

In this letter, the Resistance Inductance Capacitance Conductance (RLCG) parameters of carbon nanotube through silicon via (CNT-TSV) are modeled and a transmission line (TL) model is established through ABCD matrix. The impact of their geometrical and material parameters on the TSV transmission characteristics is analyzed over a wideband of frequency using the proposed model. An optimization methodology using air gap insulator is proposed to improve the transmission performance. SPICE results show that a 30.83% reduction in insertion loss and a 40.72% increase in eye open area, respectively.

Keywords

carbon nanotubes; circuit optimisation; integrated circuit interconnections; integrated circuit modelling; matrix algebra; three-dimensional integrated circuits; transmission lines; ABCD matrix; CNT-TSV; RLCG parameters; SPICE; TL model; TSV transmission characteristics; air gap insulator; carbon nanotube through silicon via interconnect; eye open area; geometrical parameters; insertion loss reduction; material parameters; optimization methodology; resistance inductance capacitance conductance parameters; transmission line model; Air gaps; Carbon nanotubes; Inductance; Insertion loss; Integrated circuit interconnections; Resistance; Silicon; Through-silicon vias; Air gap; CNT-TSV; signal loss; transmission characteristics;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2361429

Filename

6930830