Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Author

Mantooth, Homer Alan ; Glover, Michael D. ; Shepherd, Peter

Author_Institution

Univ. of Arkansas, Fayetteville, AR, USA

Volume

2

Issue

3

fYear

2014

fDate

Sept. 2014

Firstpage

374

Lastpage

385

Abstract

The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels is described. A synopsis of recent complementary technological developments in passives, integrated driver, and protection circuitry and electronic packaging are described, followed by an outline of the applications that stand to be impacted. A glimpse into the future based on the current technological trends is offered.

Keywords

electronics packaging; power electronics; electronic packaging; integrated driver; power electronic systems; power integrated circuits; power semiconductor devices; protection circuitry; wide band gap semiconductors; wide bandgap device technology; wide bandgap technologies; Gallium nitride; MOSFET; Photonic band gap; Power electronics; Silicon; Silicon carbide; Gallium nitride (GaN); power electronics; power integrated circuits; power semiconductor devices; silicon carbide (SiC); wide bandgap semiconductors;

fLanguage

English

Journal_Title

Emerging and Selected Topics in Power Electronics, IEEE Journal of

Publisher

ieee

ISSN

2168-6777

Type

jour

DOI

10.1109/JESTPE.2014.2313511

Filename

6777571