A highly punchthrough-immune operation method for an ultra-short-channel hot-carrier-injection type non-volatile memory cell

Author

Tsai, Wen-Jer ; Ou, T.F. ; Huang, J.S. ; Cheng, C.H. ; Lu, Chun-Yuan ; Wang, T. ; Chen, K.F. ; Han, T.T. ; Lu, T.C. ; Chen, K.C. ; Lu, Chih-Yuan

Author_Institution

Macronix Int. Co. Ltd., Hsinchu

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

A novel bias scheme is proposed for non-volatile memory cells arranged in a virtual-ground array that utilizes hot-carrier injections for program and erase operations. By taking two adjacent cells on the same wordline as a unit, and letting the commonly shared n+ region being floating during program and erase, punchthrough immunity is greatly improved. Program/erase speed, endurance, and retention characteristics are comparable to conventional operations. NBit cell is projected to be workable at sub-40 nm node by such scheme.

Keywords

hot carriers; read-only storage; NBit cell; punchthrough-immune operation method; ultra-short-channel hot-carrier-injection type nonvolatile memory cell; virtual-ground array; Channel hot electron injection; Charge carrier processes; Decoding; Dielectrics; EPROM; Hot carrier injection; Hot carriers; Leakage current; Nonvolatile memory; Split gate flash memory cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796822

Filename

4796822