Experimental Investigations into the Effects of Electrical Stress on Electromagnetic Emission from Integrated Circuits

Author

Boyer, A. ; Ben Dhia, S. ; Binhong Li ; Berbel, Nestor ; Fernandez-Garcia, Raul

Author_Institution

Lab. d´Anal. et d´Archit. des Syst., Toulouse, France

Volume

56

Issue

1

fYear

2014

fDate

Feb. 2014

Firstpage

44

Lastpage

50

Abstract

Recent studies have shown that the aging of integrated circuits may modify electromagnetic emission significantly. This paper reports on an experiment to elucidate the origins of emission level changes in a test chip using 90-nm CMOS technology. Circuit analysis, combined with electromagnetic emission and on-chip power supply voltage bounce measurements made during the application of electric stress, have identified the role of intrinsic wear-out mechanisms, which contribute to a progressive change in the transient current produced by the circuit.

Keywords

CMOS integrated circuits; integrated circuit reliability; CMOS technology; circuit analysis; electrical stress effects; electromagnetic emission; emission level; integrated circuit aging; intrinsic wear-out mechanism; on-chip power supply voltage bounce measurement; size 90 nm; test chip; transient current; Integrated circuits; Power measurement; Power supplies; Semiconductor device measurement; Stress; Stress measurement; Voltage measurement; Aging effects; electromagnetic emission; integrated circuits; semiconductor device reliability;

fLanguage

English

Journal_Title

Electromagnetic Compatibility, IEEE Transactions on

Publisher

ieee

ISSN

0018-9375

Type

jour

DOI

10.1109/TEMC.2013.2272195

Filename

6563162