A Highly Linear Integrated Temperature Sensor on a GaN Smart Power IC Platform

Author

Kwan, Alex Man Ho ; Yue Guan ; Xiaosen Liu ; Chen, Kevin J.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

Volume

61

Issue

8

fYear

2014

fDate

Aug. 2014

Firstpage

2970

Lastpage

2976

Abstract

On a GaN smart power integrated circuit (IC) platform, a highly linear (i.e., proportional to absolute temperature) temperature sensor IC is demonstrated for building voltage references as well as temperature compensation functional blocks. The circuit is designed based on the temperature-dependent characteristics of GaN-based peripheral devices (e.g., heterojunction Schottky barrier diode, enhancement-/depletion-mode high electron mobility transistors, and lateral field-effect rectifiers) that are monolithically integrated with high-voltage power devices. This monolithic integration scheme facilitates the design efforts in taking full advantages of GaN´s superior capability to operate at high temperatures. Proper circuit operation was demonstrated at 275 °C.

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; high electron mobility transistors; monolithic integrated circuits; power integrated circuits; rectifiers; reference circuits; temperature sensors; wide band gap semiconductors; GaN; high-voltage power devices; linear integrated temperature sensor IC; smart power IC platform; smart power integrated circuit platform; temperature 275 degC; temperature compensation functional blocks; voltage references; D-HEMTs; Gallium nitride; Mirrors; Temperature measurement; Temperature sensors; AlGaN/GaN SBD; AlGaN/GaN high electron mobility transistor (HEMT); AlGaN/GaN high electron mobility transistor (HEMT)AlGaN/GaN SBDGaN smart power platformlateral field-effect rectifier (L-FER)monolithic integrationon-chip temperature sensingproportional-to-absolute-temperature (PTAT) voltage source; GaN smart power platform; lateral field-effect rectifier (L-FER); monolithic integration; on-chip temperature sensing; proportional-to-absolute-temperature (PTAT) voltage source; proportional-to-absolute-temperature (PTAT) voltage source.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2327386

Filename

6832561