Title :
Analysis on light attenuation through multi-metal-layers for CMOS image sensors on system LSIs
Author :
Kim, Yunkyung ; Ikeda, Makoto ; Asada, Kunihiro
Author_Institution :
Dept. of Electron. Eng., Univ. of Tokyo, Tokyo
Abstract :
This paper proposes a method for analysis of spectral characteristics on multilayer interconnection. With CMOS technology´s downscaling, interconnect layers are multi-stratified since the number of metal levels has increased. However, this multilayer interconnection affects sensitivity of CMOS image sensors. To evaluate the effect on the multilayer interconnect of standard CMOS process technologies, we have developed a method for calculating transferred light intensity through the multilayer interconnect. We show the calculation results in case of standard CMOS 65 nm, 90 nm, 0.18 mum, 0.35 mum, 0.6 mum, and 1.2 mum process technologies.
Keywords :
CMOS image sensors; integrated circuit interconnections; large scale integration; CMOS image sensors; light attenuation; multilayer interconnection; multimetal-layers; size 0.18 nm; size 0.35 nm; size 0.6 mum; size 1.2 mum; size 65 nm; size 90 nm; system LSI; CMOS image sensors; CMOS process; CMOS technology; Dielectric thin films; Image analysis; Nonhomogeneous media; Optical attenuators; Optical films; Optical reflection; Optical scattering; component; dielectric layer; multilayer interconnection; transfer matrix;
Conference_Titel :
SoC Design Conference, 2008. ISOCC '08. International
Conference_Location :
Busan
Print_ISBN :
978-1-4244-2598-3
Electronic_ISBN :
978-1-4244-2599-0
DOI :
10.1109/SOCDC.2008.4815581
