DocumentCode :
492676
Title :
Low voltage time based CMOS active pixel sensor
Author :
Cho, Kunhee ; Lee, Dongmyung ; Han, Gunhee
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul
Volume :
01
fYear :
2008
fDate :
24-25 Nov. 2008
Abstract :
This paper proposes a low voltage time based CMOS active pixel sensor (TBAPS). The TBAPS applies the ramp signal to the pixel and performs the charge-to-time conversion in the pixel. The readout circuit detects the moment of event rather than reading the voltage signal. The proposed TBAPS improves the detection of the low illumination signal compared with the conventional TBAPS. The simulation results show that the proposed scheme provides 1 V signal range with a 1.5 V power supply voltage and 22% fill factor of 2.2 mum pixel pitch in a 0.13 mum CMOS technology.
Keywords :
CMOS image sensors; CMOS image sensors; low illumination signal; low voltage time based CMOS active pixel sensor; CMOS image sensors; CMOS technology; Charge-coupled image sensors; Circuits; Costs; Lighting; Low voltage; Power supplies; Threshold voltage; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoC Design Conference, 2008. ISOCC '08. International
Conference_Location :
Busan
Print_ISBN :
978-1-4244-2598-3
Electronic_ISBN :
978-1-4244-2599-0
Type :
conf
DOI :
10.1109/SOCDC.2008.4815582
Filename :
4815582
Link To Document :
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