DocumentCode
492676
Title
Low voltage time based CMOS active pixel sensor
Author
Cho, Kunhee ; Lee, Dongmyung ; Han, Gunhee
Author_Institution
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul
Volume
01
fYear
2008
fDate
24-25 Nov. 2008
Abstract
This paper proposes a low voltage time based CMOS active pixel sensor (TBAPS). The TBAPS applies the ramp signal to the pixel and performs the charge-to-time conversion in the pixel. The readout circuit detects the moment of event rather than reading the voltage signal. The proposed TBAPS improves the detection of the low illumination signal compared with the conventional TBAPS. The simulation results show that the proposed scheme provides 1 V signal range with a 1.5 V power supply voltage and 22% fill factor of 2.2 mum pixel pitch in a 0.13 mum CMOS technology.
Keywords
CMOS image sensors; CMOS image sensors; low illumination signal; low voltage time based CMOS active pixel sensor; CMOS image sensors; CMOS technology; Charge-coupled image sensors; Circuits; Costs; Lighting; Low voltage; Power supplies; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference, 2008. ISOCC '08. International
Conference_Location
Busan
Print_ISBN
978-1-4244-2598-3
Electronic_ISBN
978-1-4244-2599-0
Type
conf
DOI
10.1109/SOCDC.2008.4815582
Filename
4815582
Link To Document