Title :
RF receiver chip set employing 0.13 μm CMOS technology for application to K-band commercial automotive radar system
Author :
Park, Young-Bae ; Kim, Se-Ho ; Yun, Young ; Park, Kyu-Ho ; Ahn, Kwang-Ho ; Ki-Jin, Kim ; Jin-Su, Kim ; Se-Hwan, Choi
Author_Institution :
Dept. of Radio Commun. Eng., Korea Maritime Univ., Busan
Abstract :
A 24 GHz low-noise amplifier (LNA) and mixer for automotive radar applications was designed using a standard 0.13-mum CMOS technology. For mixer, single balanced resistive mixer was employed to suppress LO leakage signal on RF port. At 24 GHz, the mixer showed a conversion loss of -5.5 dB, an LO leakage suppression of -56.2 dBc on RF port, and 3rd input intercept point of 12 dBm. To achieve sufficient gain, this LNA is composed of three cascaded common-source stages. Source degeneration inductor was used to achieve low noise, and gate resistive matching was used to increase stability. The LNA showed a gain of 15.3 dB and a noise figure of 4.49 dB at 24 GHz, and it showed unconditional stability.
Keywords :
CMOS image sensors; low noise amplifiers; radio receivers; radiofrequency amplifiers; road vehicle radar; 0.13 mum CMOS technology; RF receiver chip; automotive radar system; frequency 24 GHz; gain 15.3 dB; low-noise amplifier; mixer; noise figure 4.49 dB; size 0.13 mum; Automotive engineering; CMOS technology; Gain; Inductors; K-band; Low-noise amplifiers; RF signals; Radar applications; Radio frequency; Stability; CMOS; RF Receiver; automotive radar system;
Conference_Titel :
SoC Design Conference, 2008. ISOCC '08. International
Conference_Location :
Busan
Print_ISBN :
978-1-4244-2598-3
Electronic_ISBN :
978-1-4244-2599-0
DOI :
10.1109/SOCDC.2008.4815705