Computer simulation of the native point defects structure in CdTe

Author

D´yachenko, Liliya ; Tanasyuk, Yuliya ; Fochuk, Petro ; Panchuk, Oleg ; Ostapov, Sergiy ; Minov, Evgen

Author_Institution

CSN Dept., Chernivtsi Nat. Univ., Chernivtsi, Ukraine

fYear

2009

fDate

24-28 Feb. 2009

Firstpage

22

Lastpage

25

Abstract

In this paper the computer simulation of the structure of point defects in CdTe is developed by the numeral solution of electron neutrality equation. The software presented contains lexical analyzer, which allows to construct, analyse and solve the electron neutrality equations of various type. The results of the performer calculations coincide well with experimental data, obtained from the high temperature (500-1200 K) measurements of kinetic coefficients carried out on the CdTe single crystals right their growth.

Keywords

II-VI semiconductors; cadmium compounds; galvanomagnetic effects; physics computing; point defects; CdTe; electron neutrality equation; galvanomagnetic properties; kinetic coefficients; lexical analyzer; native point defect structure; semiconductor single crystals; software analyzer; temperature 500 K to 1200 K; Computational modeling; Computer simulation; Crystals; Differential equations; Electrons; Kinetic theory; Performance evaluation; Tellurium; Temperature distribution; Temperature measurement; CdTe; Point defects; computer simulation; electro neutrality equation; lexical analyzer;

fLanguage

English

Publisher

ieee

Conference_Titel

CAD Systems in Microelectronics, 2009. CADSM 2009. 10th International Conference - The Experience of Designing and Application of

Conference_Location

Lviv-Polyana

Print_ISBN

978-966-2191-05-9

Type

conf

Filename

4839745