DocumentCode
493287
Title
Silicon microfluidic channels and microstructures in single photolithography step
Author
Pal, Prem ; Sato, Kazuo
Author_Institution
Dept. of Micro-Nano Syst. Eng., Nagoya Univ., Nagoya
fYear
2009
fDate
1-3 April 2009
Firstpage
419
Lastpage
423
Abstract
In this paper, a fabrication method of suspended silicon microfluidic channels and various shapes of microstructures of desired thickness in (100)-Si wafers using single photolithography step is presented. The fabrication method uses wafer bonding with silicon nitride (Si3N4) as intermediate layer, local oxidation of silicon (LOCOS), and complementary metal oxide semiconductor (CMOS) process compatible wet anisotropic etching. The etching process is performed in two steps in non-ionic surfactant Triton-X-100 [C14H22O(C2H4O)n] added and pure tetramethyl ammonium hydroxide (TMAH) solutions. The surfactant added TMAH is used to define the shape of the structures, whereas pure TMAH is employed for their release.
Keywords
CMOS integrated circuits; elemental semiconductors; etching; microfabrication; microfluidics; organic compounds; oxidation; photolithography; silicon; silicon compounds; surfactants; wafer bonding; (100)-silicon wafers; Si-Si3N4; complementary metal oxide semiconductor process; intermediate layer; local oxidation; microstructures; nonionic surfactant Triton-X-100; photolithography step; silicon microfluidic channels; silicon nitride; tetramethyl ammonium hydroxide solutions; wafer bonding; wet anisotropic etching; Anisotropic magnetoresistance; CMOS process; Fabrication; Lithography; Microfluidics; Microstructure; Oxidation; Shape; Silicon; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Test, Integration & Packaging of MEMS/MOEMS, 2009. MEMS/MOEMS '09. Symposium on
Conference_Location
Rome
Print_ISBN
978-1-4244-3874-7
Type
conf
Filename
4919491
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