• DocumentCode
    493287
  • Title

    Silicon microfluidic channels and microstructures in single photolithography step

  • Author

    Pal, Prem ; Sato, Kazuo

  • Author_Institution
    Dept. of Micro-Nano Syst. Eng., Nagoya Univ., Nagoya
  • fYear
    2009
  • fDate
    1-3 April 2009
  • Firstpage
    419
  • Lastpage
    423
  • Abstract
    In this paper, a fabrication method of suspended silicon microfluidic channels and various shapes of microstructures of desired thickness in (100)-Si wafers using single photolithography step is presented. The fabrication method uses wafer bonding with silicon nitride (Si3N4) as intermediate layer, local oxidation of silicon (LOCOS), and complementary metal oxide semiconductor (CMOS) process compatible wet anisotropic etching. The etching process is performed in two steps in non-ionic surfactant Triton-X-100 [C14H22O(C2H4O)n] added and pure tetramethyl ammonium hydroxide (TMAH) solutions. The surfactant added TMAH is used to define the shape of the structures, whereas pure TMAH is employed for their release.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; etching; microfabrication; microfluidics; organic compounds; oxidation; photolithography; silicon; silicon compounds; surfactants; wafer bonding; (100)-silicon wafers; Si-Si3N4; complementary metal oxide semiconductor process; intermediate layer; local oxidation; microstructures; nonionic surfactant Triton-X-100; photolithography step; silicon microfluidic channels; silicon nitride; tetramethyl ammonium hydroxide solutions; wafer bonding; wet anisotropic etching; Anisotropic magnetoresistance; CMOS process; Fabrication; Lithography; Microfluidics; Microstructure; Oxidation; Shape; Silicon; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Test, Integration & Packaging of MEMS/MOEMS, 2009. MEMS/MOEMS '09. Symposium on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-3874-7
  • Type

    conf

  • Filename
    4919491