Random Telegraph Noise-Induced Sensitivity of Data Retention to Cell Position in the Programmed Distribution of NAND Flash Memory Arrays

Author

Resnati, Davide ; Compagnoni, Christian Monzio ; Paolucci, Giovanni M. ; Miccoli, Carmine ; Spinelli, Alessandro S. ; Lacaita, Andrea L. ; Visconti, Angelo ; Goda, Akira

Author_Institution

Dipt. di ElettronicaInformazione e Bioingegneria, Politec. di Milano, Milan, Italy

Volume

36

Issue

7

fYear

2015

fDate

Jul-15

Firstpage

678

Lastpage

680

Abstract

This letter highlights a random telegraph noise-induced sensitivity of the data retention threshold-voltage transient of nand Flash memory cells to their position in the programmed array distribution. This sensitivity appears with a reduction of the threshold-voltage loss of the cells in the lower part of the programmed distribution of the memory array and an increase of that of the cells in the upper part of the distribution. The experimental evidence is explained considering the impact of random telegraph noise on the programmed array distribution in the stretch of time in-between the program-and-verify operation and the first read operation used as reference for data retention assessment.

Keywords

flash memories; sensitivity; NAND flash memory arrays; cell position; data retention assessment; first read operation; program-and-verify operation; programmed array distribution; random telegraph noise-induced sensitivity; threshold-voltage loss; time in-between operation; Arrays; Electron devices; Flash memories; Noise; Programming; Sensitivity; Transient analysis; Flash memories; random telegraph noise; semiconductor device modeling; semiconductor device reliability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2428282

Filename

7098335