A Modified EKV Model for RF Application

This paper presents a RF MOST model using the EKV model which has been initially developed for the design and analysis of low-voltage, low-current analog circuits. Since most MOSFET models are generated for digital and low-frequency analog design, a RF MOSFET model with the consideration of the HF behavior is necessarily and urgently needed for RF design. A modified EKV model is presented in this paper, with some extrinsic components used for predicting the RF characteristics of the device. The extraction procedure of model parameters is provided. Measured result from a 0.25 µm RF CMOS process with simulated result show the validity of the model.