Title :
Novel Vertical-Stacked-Array-Transistor (VSAT) for ultra-high-density and cost-effective NAND Flash memory devices and SSD (Solid State Drive)
Author :
Kim, Jiyoung ; Hong, Augustin J. ; Kim, Sung Min ; Song, Emil B. ; Park, Jeung Hun ; Han, Jeonghee ; Choi, Siyoung ; Jang, Deahyun ; Moon, Joo -Tae ; Wang, Kang L.
Author_Institution :
Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA
Abstract :
A novel 3-D NAND flash memory device, VSAT (Vertical-Stacked-Array-Transistor), has successfully been achieved. The VSAT was realized through a cost-effective and straightforward process called PIPE (planarized-Integration-on-the-same-plane). The VSAT combined with PIPE forms a unique 3-D vertical integration method that may be exploited for ultra-high-density Flash memory chip and solid-state-drive (SSD) applications. The off-current level in the polysilicon-channel transistor dramatically decreases by five orders of magnitude by using an ultra-thin body of 20 nm thick and a double-gate-in-series structure. In addition, hydrogen annealing improves the subthreshold swing and the mobility of the polysilicon-channel transistor.
Keywords :
NAND circuits; annealing; flash memories; silicon; transistors; NAND flash memory devices; PIPE; SSD; Si; VSAT; planarized-integration-on-the-same-plane; polysilicon-channel transistor; vertical-stacked-array-transistor; Annealing; Consumer electronics; Electrodes; Fabrication; Filling; Hydrogen; Materials science and technology; Moon; Semiconductor films; Solid state circuits;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7