Title :
Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory
Author :
Jang, Younggoan ; Kim, Han-Soo ; Cho, Wonseok ; Cho, Hoosung ; Jinho Kim ; Sun Il Shim ; Younggoan Jang ; Jeong, Jae-Hun ; Son, Byoung-Keun ; Dong Woo Kim ; Kihyun ; Shim, Jae-Joo ; Jin Soo Lim ; Kim, Kyoung-Hoon ; Su Youn Yi ; Lim, Ju-Young ; Chung, Dewi
Author_Institution :
Memory R&D Center, Samsung Electron. Co. Ltd., Yongin, South Korea
Abstract :
Vertical NAND flash memory cell array by TCAT (terabit cell array transistor) technology is proposed. Damascened metal gate SONOS type cell in the vertical NAND flash string is realized by a unique dasiagate replacementpsila process. Also, conventional bulk erase operation of the cell is successfully demonstrated. All advantages of TCAT flash is achieved without any sacrifice of bit cost scalability.
Keywords :
NAND circuits; flash memories; logic gates; transistors; NAND flash memory; SONOS type cell; TCAT; damascened metal gate; gate replacement; terabit cell array transistor; vertical NAND flash string; vertical cell array; Costs; Dielectric substrates; Etching; Moon; Nonhomogeneous media; Plugs; SONOS devices; Scalability; Sun; Transistors;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
