Title :
Low-current perpendicular domain wall motion cell for scalable high-speed MRAM
Author :
Fukami, S. ; Suzuki, T. ; Nagahara, K. ; Ohshima, N. ; Ozaki, Y. ; Saito, S. ; Nebashi, R. ; Sakimura, N. ; Honjo, H. ; Mori, K. ; Igarashi, C. ; Miura, S. ; Ishiwata, N. ; Sugibayashi, T.
Author_Institution :
Device Platforms Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories.
Keywords :
MRAM devices; embedded systems; magnetic domain walls; DW-motion MRAM; current 0.1 mA; current-induced domain wall motion; domain wall motion cell; high-speed embedded memories; magnetic random access memory; scalable high-speed MRAM; thermal stability; Magnetic domain walls; Magnetic domains; Random access memory; Thermal stability; Writing;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
