• DocumentCode
    497173
  • Title

    Low-current perpendicular domain wall motion cell for scalable high-speed MRAM

  • Author

    Fukami, S. ; Suzuki, T. ; Nagahara, K. ; Ohshima, N. ; Ozaki, Y. ; Saito, S. ; Nebashi, R. ; Sakimura, N. ; Honjo, H. ; Mori, K. ; Igarashi, C. ; Miura, S. ; Ishiwata, N. ; Sugibayashi, T.

  • Author_Institution
    Device Platforms Res. Labs., NEC Corp., Sagamihara, Japan
  • fYear
    2009
  • fDate
    16-18 June 2009
  • Firstpage
    230
  • Lastpage
    231
  • Abstract
    We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories.
  • Keywords
    MRAM devices; embedded systems; magnetic domain walls; DW-motion MRAM; current 0.1 mA; current-induced domain wall motion; domain wall motion cell; high-speed embedded memories; magnetic random access memory; scalable high-speed MRAM; thermal stability; Magnetic domain walls; Magnetic domains; Random access memory; Thermal stability; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2009 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-3308-7
  • Type

    conf

  • Filename
    5200610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=497173