High mobility metal S/D III–V-On-Insulator MOSFETs on a Si substrate using direct wafer bonding

III-V semiconductors on insulator structures have successfully been fabricated on a Si substrate using direct wafer bonding. Metal source/drain InGaAs-On-Insulator n-MOSFETs on a Si substrate, fabricated by employing this method, have exhibited superior device operation with high electron mobility of ~1000 cm²/VS, which amounts to the enhancement factor of 1.59x against the Si n-MOSFET at an identical N_s. This is the first demonstration of the thin-body III-V-OI MOSFETs on a Si substrate as well as the metal source/drain InGaAs MOSFETs.