Title :
Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
Author :
Chin, Hock-Chun ; Gong, Xiao ; Liu, Xinke ; Lin, Zhe ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore(NUS), Singapore, Singapore
Abstract :
We report the first demonstration of strained III-V n-MOSFETs with lattice-mismatched source/drain (S/D) stressors. Lateral tensile strain was induced by In0.4Ga0.6As S/D on the In0.53Ga0.47As channel. In-situ doping was incorporated as well for series resistance reduction. We also integrated SiH4+NH3 passivation for reduction of interface state density on In0.53Ga0.47As for the first time.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; passivation; semiconductor doping; In0.4Ga0.6As; In0.53Ga0.47As; in-situ doping; interface engineering; lateral tensile strain; lattice-mismatched source/drain stressors; passivation; strained III-V n-MOSFET; Annealing; Capacitive sensors; Dielectric substrates; Doping; Epitaxial growth; Fabrication; III-V semiconductor materials; MOSFET circuits; Passivation; Tensile strain;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
