Title :
Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode
Author :
Sasago, Y. ; Kinoshita, M. ; Morikawa, T. ; Kurotsuchi, K. ; Hanzawa, S. ; Mine, T. ; Shima, A. ; Fujisaki, Y. ; Kume, H. ; Moriya, H. ; Takaura, N. ; Torii, K.
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
Abstract :
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was fabricated using a low-thermal-budget process that achieved low contact resistivity, high on-current density of 8 MA/cm2 and low off-current density of 100 A/cm2. The improvement in the properties of poly-Si diode makes the set/reset operation of the cross-point 4F2 cell possible, leading to the size reduction of phase change memory chip.
Keywords :
phase change memories; semiconductor diodes; 4F2 cell size; cross-point phase change memory; low contact resistivity; low-contact-resistivity; low-thermal-budget process; phase change memory chip; poly-Si diode; Conductivity; Diodes; Impurities; Laboratories; Mechanical engineering; Phase change materials; Phase change memory; Phased arrays; Thermal resistance; Tungsten; cross-point; phase change memory; poly-Si diode;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
