DocumentCode
497184
Title
Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications
Author
Sik Yoon, Hong ; Baek, In-Gyu ; Zhao, Jinshi ; Sim, Hyunjun ; Young Park, Min ; Lee, Hansin ; Oh, Gyu-Hwan ; Chan Shin, Jong ; Yeo, In-Seok ; Chung, U-in
Author_Institution
Memory R&D Center, Samsung Electron. Co. Ltd., Yongin, South Korea
fYear
2009
fDate
16-18 June 2009
Firstpage
26
Lastpage
27
Abstract
Vertically defined resistance change memory cells for the vertical cross-point architecture (VCPA) as a high density non-volatile memory application are successfully demonstrated with a NiO switching layer. They showed both unipolar and bipolar switching mode. Several issues in realization for VCPA and their possible solutions are discussed.
Keywords
random-access storage; switching circuits; VCPA; bipolar switching mode; ultra-high density nonvolatile memory applications; unipolar switching mode; vertical cross-point architecture; vertical cross-point resistance change memory; Decoding; Diodes; Electrodes; Electronic mail; Flash memory; High level synthesis; Leakage current; Nonvolatile memory; Research and development; Voltage; RRAM; ReRAM; Resistance change memory; vertical cross- point; vertically defined cell;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2009 Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-3308-7
Type
conf
Filename
5200621
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