Single-charge-based modeling of transistor characteristics fluctuations based on statistical measurement of RTN amplitude

Author

Takeuchi, K. ; Nagumo, T. ; Gawa, S. Yoko ; Imai, K. ; Hayashi, Y.

Author_Institution

LSI Fundamental Res. Lab., NEC Electron. Corp., Sagamihara, Japan

fYear

2009

fDate

16-18 June 2009

Firstpage

54

Lastpage

55

Abstract

A single-charge-based random fluctuation model suited for analyzing both random telegraph noise (RTN) and intrinsic channel transistors (UTB-SOI, FinFET etc) is proposed. Combining a quantitative formula for the worst case V_TH shift (DeltaV_TH) with measured data of RTN amplitude distributions, it is shown that RTN should not be ignored for scaled SRAM design. The model also shows that scaling of intrinsic channel FETs will be limited by the fluctuations caused by residual random charge, which rapidly increase in proportion to 1/LW.

Keywords

SRAM chips; field effect transistors; random noise; statistical analysis; FinFET; RTN amplitude; intrinsic channel FET; intrinsic channel transistor; random telegraph noise amplitude; residual random charge; scaled SRAM design; single-charge-based modeling; statistical measurement; transistor characteristics fluctuation; Charge measurement; Current measurement; Exponential distribution; FETs; Fluctuations; Impurities; Logic devices; Random access memory; Resource description framework; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2009 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-3308-7

Type

conf

Filename

5200633