Title :
High quality GeO2/Ge interface formed by SPA radical oxidation and uniaxial stress engineering for high performance Ge NMOSFETs
Author :
Kobayashi, Masaharu ; Irisawa, Toshihumi ; Kope, Blanka M. ; Sun, Yun ; Saraswat, Krishna ; Wong, H-S Philip ; Pianetta, Piero ; Nishi, Yoshio
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Slot-plane-antenna (SPA) radical oxidation of Ge is shown to realize (1) orientation independent, (2) small temperature dependent oxidation, (3) smooth interface and (4) low interface state density. Mobility enhancement under uniaxial stress was demonstrated in (100) Ge NFET fabricated by utilizing SPA radical oxidation, for the first time. Drive current of (100) Ge NFET can be enhanced under uniaxial stress in the ballistic transport regime, which satisfies ITRS 22 nm node high performance spec as a Ge CMOS platform.
Keywords :
MOSFET; germanium compounds; slot antennas; GeO2-Ge; NMOSFET; SPA radical oxidation; low interface state density; mobility enhancement; orientation independent; slot-plane-antenna radical oxidation; small temperature dependent oxidation; smooth interface; uniaxial stress engineering; Aluminum oxide; Annealing; Ballistic transport; CMOS process; Dielectric substrates; Electron mobility; Interface states; Oxidation; Stress; Temperature dependence;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
