Title :
New approach to form EOT-scalable gate stack with strontium germanide interlayer for high-k/Ge MISFETs
Author :
Kamata, Yoshiki ; Takashima, Akira ; Kamimuta, Yuuichi ; Tezuka, Tsutomu
Author_Institution :
MIRAI-Toshiba, Kawasaki, Japan
Abstract :
A new approach to form EOT-scalable high-k/Ge gate stack with a Sr germanide (SrGeX) interlayer has been demonstrated to avoid drawbacks originating from thermally unstable nature of Ge oxide interlayer. Significant reduction of Jg has been observed due to the new interlayer. A promising EOT scalability is confirmed at around EOT of 1 nm. A record high peak hole mobility of 481 cm2/Vsec for high-k/Ge p-MISFETs has been obtained in LaAlO3/SrGeX/Ge p-MISFETs.
Keywords :
MISFET; germanium compounds; high-k dielectric thin films; hole mobility; lanthanum compounds; semiconductor devices; strontium compounds; EOT-scalable gate stack; GeO2; LaAlO3-SrGe-Ge; germanium oxide interlayer; high-k/germanium MISFET; hole mobility; strontium germanide interlayer; thermally unstable nature; Annealing; Dielectric substrates; Fabrication; High K dielectric materials; High-K gate dielectrics; MISFETs; Scalability; Strontium; Surface reconstruction; Thermal stability;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
