Gate-all-around quantum-wire field-effect transistor with Dopant Segregation at Metal-Semiconductor-Metal heterostucture

Author

Wong, Hoong-Shing ; Tan, Lian-Huat ; Chan, Lap ; Lo, Guo-Qiang ; Samudra, Ganesh ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2009

fDate

16-18 June 2009

Firstpage

92

Lastpage

93

Abstract

We report the first demonstration of dopant-segregated metal-semiconductor-metal (DS-MSM) heterostructure on Gate-All-Around Si quantum wire field-effect transistor (QWFET), achieving low external resistance and possibly injection velocity enhancement. I_ON enhancement of 72% and 26% over conventional QWFETs are obtained for n- and p- DS-MSM QWFETs, respectively. Record high single Si QWFET I_ON, normalized by quantum wire diameter, of 4.03 mA/mum (n-DS-MSM QWFET) and 1.5 mA/mum (p-DS-MSM QWFET) are reported. In addition, larger I_ON values are observed for <100> as compared to <110> channel orientation DS-MSM QWFETs.

Keywords

field effect transistors; semiconductor doping; semiconductor quantum wires; dopant segregation; gate-all-around quantum-wire field-effect transistor; metal-semiconductor-metal heterostucture; CMOS technology; Contact resistance; FETs; Implants; Intrusion detection; Microelectronics; Quantum computing; Silicidation; Silicon; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2009 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-3308-7

Type

conf

Filename

5200645