Title :
Sub-10 nm gate-all-around CMOS nanowire transistors on bulk Si substrate
Author :
Li, Ming ; Yeo, Kyoung Hwan ; Sung Dae Suk ; Yeoh, Yun Young ; Kim, Dong-Won ; Chung, Tae Young ; Oh, Kyung Seok ; Lee, Won-Seong
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin, South Korea
Abstract :
In this paper, sub-10 nm gate-all-around (GAA) CMOS silicon nanowire field-effect transistors (SNWFET) on bulk Si substrate are fabricated successfully for the first time with 13-nm-diameter silicon nanowire channel. On-state currents of 1494/1054 muA/mum at off leakage currents of 102/6.44 nA/mum are obtained for N/PMOS, respectively. The impacts of nanowire diameter (DNW) and gate oxide thickness (TOX) as well S/D parasitic resistance (RSD) on performance are investigated in details.
Keywords :
CMOS integrated circuits; MOSFET; leakage currents; nanoelectronics; nanowires; N-PMOS; SNWFET; gate-all-around CMOS nanowire field-effect transistor; off leakage current; silicon nanowire channel; size 13 nm; Ballistic transport; CMOS technology; FETs; Leakage current; MOS devices; Research and development; Scalability; Silicon; Substrates; Transistors; CMOS; ballistic transport; gate-all-around; nanowire; source-drain parasitic resistance;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
